NXP has launched its latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications delivering RF output power of 500W at frequencies between 1.2GHz and 1.4GHz.
The spread-spectrum wireless com-munications standard, IS-95/3GPP, embodies stringent specifications for linearity and adjacent-channel power ratio (ACPR). To meet them, wideband-code-division ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...
To address the challenge of improving power-added efficiency (PAE) for high-powered amplifiers, Analog Devices developed the ADL5511 TruPwr rms and envelope detector. The chip combines two RF ...
Over the years, tutorials have appeared in EMC journals explaining how to estimate the power required from a power amplifier intended for use in an RF immunity test system. Little material, if any, ...
RF Power Amplifier Market To Reach US$26.7 Billion By 2033 Amid 5G, Defence & SATCOM Expansion. EINPresswire/ -- The global RF Power Amplifier Market is projected to be valued at US$12.7 billion in ...
Frank Hertel’s repair shop, a division of Newman-Kees Consulting, was asked to resolve a problem of spurs on either side of the main carrier in an Energy-Onix 30W Stealth FM Exciter. As these exciters ...
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